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Numéro de référence | AP2622GY-HF | ||
Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
Fabricant | Advanced Power Electronics | ||
Logo | |||
Advanced Power
Electronics Corp.
AP2622GY-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
▼ Small Package Outline
▼ Surface Mount Package
▼ RoHS Compliant
D2
S1
D1
SOT-26
G2
S2
G1
BVDSS
RDS(ON)
ID
Description
AP2622 series are from Advanced Power innovated
design and silicon process technology to achieve the
lowest possible on-resistance and fast switching
performance. It provides the designer with an extreme
efficient device for use in a wide range of power
applications.
The SOT-26 package is widely used for all commercial-
industrial applications.
G1
D1
G2
S1
50V
1.8Ω
520mA
D2
S2
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Drain Current3, VGS @ 10V
Drain Current3, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
50 V
+20 V
520 mA
410 mA
1.5 A
0.8 W
Linear Derating Factor
0.006
W/℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
150
Unit
℃/W
1
201501224
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Pages | Pages 5 | ||
Télécharger | [ AP2622GY-HF ] |
No | Description détaillée | Fabricant |
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