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Advanced Power Electronics - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence AP2623GY
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant Advanced Power Electronics 
Logo Advanced Power Electronics 





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AP2623GY fiche technique
Advanced Power
Electronics Corp.
AP2623GY
Pb Free Plating Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low Gate Charge
Low On-resistance
Surface Mount Package
G1
Description
D1
G2
S1
D2
S2
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-26 package is universally used for all commercial-industrial
applications.
BVDSS
RDS(ON)
ID
-30V
170mΩ
- 2A
D2
S1
D1
SOT-26
G2
S2
G1
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
-30
±20
-2
-1.6
-20
1.2
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Value
110
Unit
/W
Data and specifications subject to change without notice
200614041

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