(PDF) AP2625Y Datasheet - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Número de pieza	AP2625Y
Descripción	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes	Advanced Power Electronics
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No Preview Available ! Advanced Power Electronics Corp. AP2625Y P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Low On-resistance ▼ Surface Mount Package G1 Description D1 G2 S1 D2 S2 Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is universally used for all commercial-industrial applications. BVDSS RDS(ON) ID -30V 135mΩ - 2.3A D2 S1 D1 SOT-26 G2 S2 G1 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Rating -30 ±12 -2.3 -2 -20 1.2 0.01 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Max. Value 110 Unit ℃/W Data and specifications subject to change without notice 200611041 1 page

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PDF AP2625Y Data sheet ( Hoja de datos )