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AP2626GY fiches techniques PDF

Advanced Power Electronics - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence AP2626GY
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant Advanced Power Electronics 
Logo Advanced Power Electronics 





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AP2626GY fiche technique
Advanced Power
Electronics Corp.
AP2626GY
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Smaller Outline Package
Surface mount package
RoHS compliant
D2
S1
D1
SOT-26
G2
S2
G1
BVDSS
RDS(ON)
ID
30V
72mΩ
3.3A
Description
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-26 package is universally used for all commercial-industrial
applications.
G1
D1
G2
S1
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
30
±20
3.3
2.6
10
1.2
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Value
110
Unit
/W
Data and specifications subject to change without notice
200519062-1/4

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