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PDF AP2900EC4 Data sheet ( Hoja de datos )
| Número de pieza | AP2900EC4 | |
| Descripción | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP2900EC4
Halogen-Free Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Capable of 2.5V Gate Drive
▼ Ultra-small Package Outline
▼ Protection Diode Built-in
▼ RoHS Compliant & Halogen-Free
BSSS
RSS(ON)
IS
24V
22.5mΩ
9A
Description
AP2900 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for the load switch,
charge switch, battery switch for portable application.
WLCSP 4 ball
1. 59mm + 0.02mm
0.65mm
.
Top view
G2 S2
G1 S1
Bottom view
0.225 mm
0.165mm
0.3mm
G1
G2
S1
S2
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VSSS
24 V
VGSS
+12 V
IS
ISM
PD@TA=25℃
TSTG
TJ
Source Current
Pulsed Source Current1
Total Power Dissipation3
Storage Temperature Range
Junction Temperature
9
60
1.6
-55 to 150
-55 to 150
A
A
W
℃
℃
Data and specifications subject to change without notice
1
201502241
1 page  
AP2900EC4
10
T A = 25 o C
8
6
4.5V
4.0V
3.5V
3.0V
2.5V
V GS =2.0V
4
2
0
0 0.4 0.8 1.2 1.6 2
V SS , Source-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
T A =150 o C
4.5V
4.0V
8 3.5V
3.0V
2.5V
6 V GS =2.0V
4
2
0
0.0 1.0 2.0 3.0 4.0
V SS , Source-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
70
I S =3A
T A =25 o C
60
50
40
30
20
10
012345
V GS , Gate-to-Source Voltage (V)
Fig 3. Static Source-to-Source
On-Resistance v.s. Gate Voltage
10
.
T j =150 o C
T j =25 o C
1
T j = -55 o C
0.1
0
0.2 0.4 0.6 0.8
1
V F(S-S) , Source-to-Source Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
40
I S =3A
30
V GS =2.5V
V GS =3.1V
V GS =3.7V
20
V GS =4.0V
V GS =4.5V
10
-100 -50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 4. Typ. Source-to-Source on State
Resistance v.s. Junction Temperature
6
I S =3A
5 V SS =10V
4
3
2
1
0
0 4 8 12 16 20 24
Q G , Total Gate Charge (nC)
Fig 6. Gate Charge Characteristics
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AP2900EC4.PDF ] | |
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