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PDF AP2904EC4 Data sheet ( Hoja de datos )

Número de pieza AP2904EC4
Descripción DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes Advanced Power Electronics 
Logotipo Advanced Power Electronics Logotipo



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No Preview Available ! AP2904EC4 Hoja de datos, Descripción, Manual

Advanced Power
Electronics Corp.
AP2904EC4
Halogen-Free Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Capable of 2.5V Gate Drive
Ultra-small Package Outline
Protection Diode Built-in
RoHS Compliant & Halogen-Free
VSSS
RSS(ON)
IS
24V
38mΩ
6A
Description
AP2904 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for the load switch,
charge switch, battery switch for portable application.
WLCSP 4 ball
1. 34mm + 0.02mm
0.65 m m
.
Top view
G2 S2
G1 S1
Bottom view
0.225 mm
0.165mm
0.3mm
G1
G2
S1
S2
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VSSS
24 V
VGSS
IS
ISM
PD@TA=25
TSTG
TJ
Source Current3
Pulsed Source Current1
Total Power Dissipation3
Storage Temperature Range
Junction Temperature
+12
6
45
1.25
-55 to 150
-55 to 150
V
A
A
W
Data and specifications subject to change without notice
1
201503131

1 page




AP2904EC4 pdf
AP2904EC4
10
T A = 25 o C
4.5V
4.0V
8 3.5V
3.0V
2.5V
6 V GS =2.0V
4
2
0
0 0.4 0.8 1.2 1.6 2
V SS , Source-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
T A =150 o C
4.5V
4.0V
8 3.5V
3.0V
2.5V
6 V GS =2.0V
4
2
0
0.0 1.0 2.0 3.0 4.0
V SS , Source-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
46
I S =1A
T A =25 o C
42
38
.
34
30
26
12345
V GS , Gate-to-Source Voltage (V)
Fig 3. Static Source-to-Source
On-Resistance v.s. Gate Voltage
10
T j =150 o C
1 T j =25 o C
T j = -55 o C
0.1
0
0.2 0.4 0.6 0.8
1
V F(S-S) , Source-to-Source Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
60
I S =1A
50
V GS =2.5V
40 V GS =3.1V
30 V GS =4.0V
V GS =4.5V
20
-100 -50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 4. Typ. Source-to-Source on State
Resistance v.s. Junction Temperature
6
I S =4.5A
5 V SS =20V
4
3
2
1
0
0 4 8 12 16 20
Q G , Total Gate Charge (nC)
Fig 6. Gate Charge Characteristics
5

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