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PDF AP2906EY Data sheet ( Hoja de datos )
| Número de pieza | AP2906EY | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP2906EY
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
▼ Capable of 2.5V Gate Drive
▼ Surface mount package
▼ RoHS Compliant & Halogen-Free
G2
D1/D2
G1
SOT-26
S2
D1/D2
S1
BVDSS
RDS(ON)
ID3
20V
35mΩ
4.7A
Description
AP2906 series are from Advanced Power innovated
design and silicon process technology to achieve the
lowest possible on-resistance and fast switching
performance. It provides the designer with an extreme
efficient device for use in a wide range of power
applications.
The SOT-26 package is widely used for all commercial-
industrial applications.
D1/D2
G1 G2
S1 S2
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current3, VGS @ 4V
Drain Current3, VGS @ 4V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
20
+8
4.7
3.8
20
1.25
-55 to 150
-55 to 150
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
100
Unit
℃/W
1
201504301
1 page  
AP2906EY
8 1.6
6 1.2
4 0.8
2 0.4
0
25 50 75 100 125 150
T A , Ambient Temperature ( o C )
Fig 13. Drain Current v.s. Ambient
Temperature
80
T j =25 o C
0
0 50 100
T A , Ambient Temperature( o C)
Fig 14. Total Power Dissipation
150
60
40
2.5V
V GS =4.0V
20
0 2 4 6 8 10 12
I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
.
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AP2906EY.PDF ] | |
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