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PDF AP8600MT Data sheet ( Hoja de datos )
| Número de pieza | AP8600MT | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AP8600MT (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Advanced Power
Electronics Corp.
AP8600MT
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ SO-8 Compatible with Heatsink
D
▼ Ultra Low On-resistance
▼ RoHS Compliant & Halogen-Free
G
S
Description
AP8600 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The PMPAK ® 5x6 package is special for DC-DC converters
application and the foot print is compatible with SO-8 with backside
heat sink and lower profile.
BVDSS
RDS(ON)
ID4
80V
3.9mΩ
120A
D
D
D
D
S
S
S
G
PMPAK® 5x6
Absolute
Symbol
Maximum
RatingPsa@ramTejt=er25o.C(unless
otherwise specified)
Rating
Units
VDS
VGS
ID@TC=25℃
ID@TA=25℃
ID@TA=70℃
IDM
PD@TC=25℃
PD@TA=25℃
EAS
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Chip), VGS @ 10V4
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation3
Single Pulse Avalanche Energy5
Storage Temperature Range
Operating Junction Temperature Range
80
+20
120
26.6
21.3
240
104
5
86.4
-55 to 150
-55 to 150
V
V
A
A
A
A
W
W
mJ
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
1.2
25
Unit
℃/W
℃/W
1
201505262
1 page  
AP8600MT
2
I D =1mA
1.6
1.2
0.8
0.4
0
-100 -50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 13. Normalized BVDSS v.s. Junction
Temperature
18
T j =25 o C
14
120
100
80
60
40
20
0
0 50 100
T C , Case Temperature( o C)
Fig 14. Total Power Dissipation
150
V GS =5.0V
10
6.0V
6
V GS =10V
2
0 20 40 60 80
I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
.
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AP8600MT.PDF ] | |
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