|
|
PDF AP8600P Data sheet ( Hoja de datos )
| Número de pieza | AP8600P | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de AP8600P (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
Advanced Power
Electronics Corp.
AP8600P
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Ultra-low On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
G
D
S
BVDSS
RDS(ON)
ID3
80V
5mΩ
105A
Description
AP486040 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-220 package is widely preferred for all commercial-
iTnhdeusTtrOia-l220thrpoaucgkhagehoisle widaeplpylicparetiofenrsre. d Tfohrealllocwommtheerrcmiaal-l
rinedsuisstatrniacle athnrdoulogwh phaockleageapcpolsictactioonntsri.butTeheto thloewwotrhldewrmidael
preospisutlanr cpeacaknadgelo. w package cost contribute to the worldwide
popular package.
G
D
S
TO-220(P)
Absolute
Symbol
Maximum
RatingPsa@ramTej=te2r 5oC. (unless
otherwise specified)
Rating
Units
VDS
VGS
ID@TC=25℃
ID@TC=25℃
ID@TC=100℃
IDM
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Chip), VGS @ 10V3
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V
Pulsed Drain Current1
80 V
+20 V
105 A
80 A
67 A
320 A
PD@TC=25℃
PD@TA=25℃
EAS
TSTG
TJ
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
104
2
28.8
-55 to 150
-55 to 150
W
W
mJ
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
1.2
62
Units
℃/W
℃/W
1
201602013
1 page  
AP8600P
14
T j =25 o C
12
10
8
V GS =5.0V
6
4
V GS =6V
V GS =10V
2
0 10 20 30 40 50 60 70 80
I D , Drain Current (A)
Fig 13. Typ. Drain-Source on State
Resistance
2
I D =1mA
1.6
160
120
80
40
0
0 50 100
T C , Case Temperature( o C)
Fig 14. Total Power Dissipation
150
1.2
.
0.8
0.4
0
-100 -50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 15. Normalized BVDSS v.s. Junction
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AP8600P.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AP8600MT | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
| AP8600P | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |