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AP93T03AGMT-HF fiches techniques PDF

Advanced Power Electronics - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence AP93T03AGMT-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant Advanced Power Electronics 
Logo Advanced Power Electronics 





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AP93T03AGMT-HF fiche technique
Advanced Power
Electronics Corp.
AP93T03AGMT-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
D BVDSS
SO-8 Compatible with Heatsink
Low On-resistance
RoHS Compliant & Halogen-Free
G
RDS(ON)
ID5
S
Description
AP93T03A series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The PMPAK ® 5x6 ppackage is special for voltage conversion application
using standard infrared reflow technique with the backside heat sink to
achieve the good thermal performance.
S
S
S
G
30V
4.5mΩ
86A
D
D
D
D
PMPAK® 5x6
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25
ID@TA=25
ID@TA=70
IDM
PD@TC=25
PD@TA=25
EAS
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Chip), VGS @ 10V5
Drain Current3, VGS @ 10V
Drain Current3, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
30
+20
86
25.7
20.6
160
56.8
5
45
-55 to 150
-55 to 150
V
V
A
A
A
A
W
W
mJ
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
2.2
25
Unit
/W
/W
1
201411042

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