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AP9435GH-HF fiches techniques PDF

Advanced Power Electronics - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence AP9435GH-HF
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant Advanced Power Electronics 
Logo Advanced Power Electronics 





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AP9435GH-HF fiche technique
Advanced Power
Electronics Corp.
AP9435GH/J-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low Gate Charge
Simple Drive Requirement
D
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
G
S
Description
AP9435 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited
for high current application due to the low connection resistance. The
through-hole version (AP9435GJ) are available for low-profile
applications.
BVDSS
RDS(ON)
ID
-30V
50mΩ
- 20A
G
D
S
TO-252(H)
G
D
S
TO-251(J)
Absolute
Symbol
Maximum
RatingPsa@ramTej=te2r 5oC. (unless
otherwise specified)
Rating
Units
VDS Drain-Source Voltage
- 30 V
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Gate-Source Voltage
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
+20 V
- 20 A
-13 A
-60 A
12.5 W
0.1 W/
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
10
62.5
110
Units
/W
/W
/W
1
201409176AP

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