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Numéro de référence | AP9435GH-HF | ||
Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
Fabricant | Advanced Power Electronics | ||
Logo | |||
1 Page
Advanced Power
Electronics Corp.
AP9435GH/J-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
▼ Simple Drive Requirement
D
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
G
S
Description
AP9435 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited
for high current application due to the low connection resistance. The
through-hole version (AP9435GJ) are available for low-profile
applications.
BVDSS
RDS(ON)
ID
-30V
50mΩ
- 20A
G
D
S
TO-252(H)
G
D
S
TO-251(J)
Absolute
Symbol
Maximum
RatingPsa@ramTej=te2r 5oC. (unless
otherwise specified)
Rating
Units
VDS Drain-Source Voltage
- 30 V
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Gate-Source Voltage
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
+20 V
- 20 A
-13 A
-60 A
12.5 W
0.1 W/℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
10
62.5
110
Units
℃/W
℃/W
℃/W
1
201409176AP
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Pages | Pages 5 | ||
Télécharger | [ AP9435GH-HF ] |
No | Description détaillée | Fabricant |
AP9435GH-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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