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Número de pieza | AP3P080N | |
Descripción | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Fabricantes | Advanced Power Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AP3P080N (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Advanced Power
Electronics Corp.
AP3P080N
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 2.5V Gate Drive
▼ Small Package Outline
D
▼ Surface Mount Device
▼ RoHS Compliant & Halogen-Free
SOT-23S G
Description
AP3P080 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide range
of power applications.
The SOT-23S package is widely preferred for commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
S
BVDSS
RDS(ON)
ID
-30V
80mΩ
-3.2A
D
G
S
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current3, VGS @ 4.5V
Drain Current3, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
- 30
+12
-3.2
-2.6
-10
1.25
-55 to 150
-55 to 150
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
100
Unit
℃/W
1
201511271
1 page AP3P080N
2
I D = -1mA
1.6
1.2
0.8
0.4
0
-100 -50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 13. Normalized BVDSS v.s. Junction
Temperature
240
T j =25 o C
200
160
.
120
80
-2.5V
V GS = -4.5V
40
0 2 4 6 8 10 12
-I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
1.6
1.2
0.8
0.4
0
0 50 100
T A , Ambient Temperature( o C)
Fig 14. Total Power Dissipation
150
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet AP3P080N.PDF ] |
Número de pieza | Descripción | Fabricantes |
AP3P080N | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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