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PDF PE42020 Data sheet ( Hoja de datos )
| Número de pieza | PE42020 | |
| Descripción | True DC RF Switch | |
| Fabricantes | Peregrine Semiconductor | |
| Logotipo |  |
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PE42020
Product Specification
UltraCMOS® True DC RF Switch, 0 Hz–8000 MHz
Features
• High power handling
▪ 30 dBm @ DC
▪ 36 dBm @ 8 GHz
• Maximum voltage (DC or AC peak): ±10V on the
RF ports
• Total harmonic distortion (THD): –84 dBc
• Configurable 50Ω absorptive or open reflective
switch via a single pin (LZ)
• Packaging – 20-lead 4 × 4 mm QFN
Applications
• Test and measurement
▪ Signal sources
▪ Communication testers
▪ Spectrum analyzers
▪ Network analyzers
• Automated test equipment
▪ Complex combination of DC + RF/analog and
digital signals
Figure 1 • PE42020 Functional Diagram
RFC
RF1
50Ω 50Ω
DC Tracking
CMOS Control Driver and ESD
LZ LS CTRL VDD VSS
RF2
Product Description
The PE42020 is a HaRP™ technology-enhanced SPDT True DC RF switch that operates from zero Hertz up to
8 GHz with integrated RF, analog and digital functions. The PE42020 can accommodate up to ±10V input DC
voltage on the RF ports. It can be configured as a 50Ω absorptive or an open reflective True DC switch via the
single LZ pin. The PE42020 True DC RF switch delivers excellent RF performance and high power handling
down to zero Hertz, making this device ideal for handling the complex combination of DC, RF/analog and digital
signals in test and measurement (T&M) and automated test equipment (ATE) applications.
The PE42020 is manufactured on Peregrine’s UltraCMOS® process, a patented variation of silicon-on-insulator
(SOI) technology on a sapphire substrate.
Peregrine’s HaRP™ technology enhancements deliver high linearity and excellent harmonics performance. It is
an innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and
integration of conventional CMOS.
©2014, Peregrine Semiconductor Corporation. All rights reserved. • Headquarters: 9380 Carroll Park Drive, San Diego, CA, 92121
Product Specification
www.psemi.com
DOC-23814-3 – (12/2014)
1 page  
PE42020
UltraCMOS® True DC RF Switch
Table 4 provides the PE42020 key electrical specifications @ 25 °C, VDD = +15V, VSS = –15V, LZ = 1 (open
reflective), 0 VDC at RF ports (ZS = ZL = 50Ω), unless otherwise specified.
Table 4 • PE42020 Electrical Specifications(1)
Parameter
Path
Condition
Min Typ Max Unit
Operating frequency
0 Hz
Insertion loss
RFC–RFX
0 Hz
0–3 GHz
3–6 GHz
6–8 GHz
Isolation
RFX–RFX
RFC–RFX
0–3 GHz
3–6 GHz
6–8 GHz
0–3 GHz
3–6 GHz
6–8 GHz
35
29
25
34
27
21
Return loss
(active and RFC ports)
RFC–RFX
0–3 GHz
3–6 GHz
6–8 GHz
Total harmonic distortion
1 kHz (2.5 VPP into 300Ω load)
Input 0.1dB compression
point(2)
RFC–RFX
40 MHz–8 GHz
Input IP2
RFC–RFX
836 MHz, 1900 MHz
2.7 MHz
4.8 MHz
Input IP3
RFC–RFX
836 MHz, 1900 MHz
2.7 MHz
4.8 MHz
Settling time
50% CTRL to 0.05 dB final value
Switching time
50% CTRL to 90% or 10% RF
Notes:
1) Device is linear down to 0 Hz.
2) The input 0.1dB compression point is a linearity figure of merit. Refer to Table 2 for the RF input power (50Ω).
8 GHz
As
shown
0.60 0.75
0.85 1.00
1.00 1.25
1.10 1.35
dB
dB
dB
dB
37 dB
31 dB
27 dB
36 dB
29 dB
24 dB
20 dB
19 dB
15 dB
–84 dBc
38 dBm
115 dBm
105 dBm
90 dBm
62 dBm
61 dBm
55 dBm
35 45 μs
10 14 μs
DOC-23814-3 – (12/2014)
www.psemi.com
Page 5
5 Page 
PE42020
UltraCMOS® True DC RF Switch
Figure 9 • Insertion Loss vs VDD/VSS (RFC–RFX), LZ = 0
+11V/–11V
+13.5V/–13.5V
0
+15V/–15V
-1
-2
-3
-4
-5
01234567
Frequency (GHz)
8
Figure 10 • Insertion Loss vs VDD/VSS (RFC–RFX), LZ = 1
+11V/–11V
+13.5V/–13.5V
0
+15V/–15V
-1
-2
-3
-4
-5
01234567
Frequency (GHz)
8
DOC-23814-3 – (12/2014)
www.psemi.com
Page 11
11 Page | ||
| Páginas | Total 25 Páginas | |
| PDF Descargar | [ Datasheet PE42020.PDF ] | |
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