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PDF AP60N2R5I Data sheet ( Hoja de datos )
| Número de pieza | AP60N2R5I | |
| Descripción | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP60N2R5I
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
▼ RoHS Compliant & Halogen-Free
G
D
S
Description
AP60N2R5 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides a
high isolation voltage capability and low thermal resistance between
the tab and the external heat-sink.
VDS @ Tj,max.
RDS(ON)
ID3
650V
2.5Ω
3.5A
G
DS
TO-220CFM(I)
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
600 V
VGS
ID@TC=25℃
ID@TC=100℃
IDM
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
+20 V
3.5 A
2.2 A
14 A
PD@TC=25℃
Total Power Dissipation
26 W
PD@TA=25℃
EAS
Total Power Dissipation
Single Pulse Avalanche Energy4
1.92 W
8 mJ
TSTG
Storage Temperature Range
-55 to 150
℃
TJ Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
4.8
65
Units
℃/W
℃/W
1
201411261
1 page  
MARKING INFORMATION
60N2R5
YWWSSS
Part Number
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
AP60N2R5I
.
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AP60N2R5I.PDF ] | |
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