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Advanced Power Electronics - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Numéro de référence AP6N090N
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Fabricant Advanced Power Electronics 
Logo Advanced Power Electronics 





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AP6N090N fiche technique
Advanced Power
Electronics Corp.
AP6N090N
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Small Package Outline
D
Surface Mount Device
RoHS Compliant & Halogen-Free
SOT-23S G
S
Description
AP6N090 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide range
of power applications.
The SOT-23S package is widely preferred for commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
BVDSS
RDS(ON)
ID
60V
90mΩ
2.5A
D
G
S
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
60 V
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
+20
2.5
2
10
1.25
-55 to 150
-55 to 150
V
A
A
A
W
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
100
Unit
/W
1
201508061

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