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PDF RHD5901 Data sheet ( Hoja de datos )
| Número de pieza | RHD5901 | |
| Descripción | Quad Operational Amplifier | |
| Fabricantes | Cobham Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de RHD5901 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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RadHard-by-Design Analog
RHD5901
Quad Operational Amplifier with Hi Z Output Control
Released Datasheet
Cobham.com/HiRel
March 28, 2016
The most important thing we build is trust
FEATURES
Single power supply operation (3.3V to 5.0V) or dual power supply operation (±1.65 to ±2.5V)
Radiation performance
- Total dose:
- ELDRS Immune
- SEL Immune
- Neutron Displacement Damage
>1 Mrad(Si); Dose rate = 50-300 rad(Si)/s
>100 MeV-cm2/mg
>1014 neutrons/cm2
Rail-to-Rail input and output range
Enable pin to Enable/Disable amplifiers in pairs.
Short Circuit Tolerant
Full military temperature range
Designed for aerospace and high reliability space applications
Packaging – Hermetic ceramic SOIC
- 16-pin, .417"L x .300"W x .120"Ht
- Weight - 0.8 grams max
Radiation Hardness Assurance Plan: DLA Certified to MIL-PRF-38534, Appendix G.
GENERAL DESCRIPTION
The RHD5901 is a radiation hardened, single supply, quad operational amplifier with enable in a 16-pin
SOIC package. The RHD5901 design uses specific circuit topology and layout methods to mitigate total ion-
izing dose effects and single event latchup. These characteristics make the RHD5901 especially suited for
the harsh environment encountered in Deep Space missions. It is guaranteed operational from -55°C to
+125°C. Available screened in accordance with MIL-PRF-38534 Class K, the RHD5901 is ideal for demand-
ing military and space applications.
ORGANIZATION AND APPLICATION
The RHD5901 amplifiers are capable of rail-to-rail input and outputs. Performance characteristics listed are
for general purpose operational 5V CMOS amplifier applications. The amplifiers will drive substantial
resistive or capacitive loads and are unity gain stable under normal conditions. Resistive loads in the low
kohm range can be handled without gain derating and capacitive loads of several nF can be tolerated.
CMOS device drive has a negative temperature coefficient and the devices are therefore inherently tolerant
to momentary shorts, although on chip thermal shutdown is not provided. All inputs and outputs are diode
protected.
The devices will not latch with SEU events to above 100 MeV-cm2/mg. Total dose degradation is minimal
to above 1 Mrad(Si). Displacement damage environments to neutron fluence equivalents in the mid 1014
neutrons per cm2 range are readily tolerated. There is no sensitivity to low-dose rate (ELDRS) effects. SEU
effects are application dependent.
The RHD5901 is configured with enable/disable control. Pairs of amplifiers are put in a power-down
condition with their outputs in a high impedance state. Several useful operational amplifier configurations
are supported where more than one amplifier can feed an output with others disabled.
SCD5901
Rev G
1 Cobham Semiconductor Solutions
www.cobham.com/HiRel
1 page  
RHD5901 QUAD OPERATIONAL AMPLIFIER APPLICATION NOTES
APPLICATION NOTE 1: DUAL POWER SUPPLY AMPLIFIER
Inverting Amplifier
VOUT=
–V
I N
RR-----21-
R1 R2
VIN
EN
+2.5V
-2.5V
VOUT
Non Inverting Amplifier
VOUT=
EN
VIN1 + RR-----21-
+2.5V
VIN
VOUT
-2.5V
R2
R1
APPLICATION NOTE 2: SINGLE POWER SUPPLY AMPLIFIER
Inverting Amplifier
VOUT= –VINRR-----21-
R2
Non Inverting Amplifier
VOUT=
V
IN
1
+
RR-----21-
+5V
VIN
+5V
EN
R1 +5V
R3 Vbias
VOUT
R3 EN
+5V
VIN
Vbias
R4
VOUT
R2
R4
R1
Note: For VOUT DC @ mid range of common mode voltage range, VBIAS = 2.5/(1+R2/R1), VBIAS = +5*R4/(R3+R4)
SCD5901
Rev G 3/28/2016
5 Cobham Semiconductor Solutions
www.cobham.com/HiRel
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet RHD5901.PDF ] | |
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