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PDF RHD5910 Data sheet ( Hoja de datos )
| Número de pieza | RHD5910 | |
| Descripción | Quad Comparator | |
| Fabricantes | Cobham Semiconductor | |
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RadHard-by-Design Analog
RHD5910
Quad Comparator, High Speed
Released Datasheet
Cobham.com/HiRel
March 28, 2016
The most important thing we build is trust
FEATURES
Single power supply operation at 3.3V or 5.0V
Radiation performance
- Total dose:
- ELDRS Immune
- SEL Immune
- Neutron Displacement Damage
> 1 Mrad(Si); Dose rate = 50-300 rad(Si)/s
> 100 MeV-cm2/mg
> 1014 neutrons/cm2
Short Circuit Tolerant
Full military temperature range
Designed for aerospace and high reliability space applications
Packaging – Hermetic ceramic SOIC
- 16-pin, .417"L x .300"W x .120"Ht
- Weight - 0.8 grams max
Radiation Hardness Assurance Plan: DLA Certified to MIL-PRF-38534, Appendix G.
GENERAL DESCRIPTION
The RHD5910 is a radiation hardened, single supply, high speed, quad comparator in a 16-pin SOIC package.
The RHD5910 design uses specific circuit topology and layout methods to mitigate total ionizing dose effects
and single event latchup. These characteristics make the RHD5910 especially suited for the harsh
environment encountered in Deep Space missions. It is guaranteed operational from -55°C to +125°C.
Available screened in accordance with MIL-PRF-38534 Class K, the RHD5910 is ideal for demanding
military and space applications.
ORGANIZATION AND APPLICATION
The RHD5910 quad comparator is intended for operation with dynamic signals on either or both inputs.
Comparison is ’continuous’, that is, the circuit functions as high gain open loop amplifiers with a digital
output. For slow input signals with small input differences the comparators can be expected to respond to
small noise signals at the inputs. Feedback hysteresis is the responsibility of the user to avoid ’chattering’
on system noise.
The comparator will accept signals anywhere in the included power supply range. The circuit delay is
specified for a half-volt single ended or differential input step of either polarity ending in an input polarity
reversal of 10mV. See Switching Diagrams.
CMOS device drive has a negative temperature coefficient and the devices are therefore inherently tolerant
to momentary shorts, although on chip thermal shutdown is not provided. All inputs and outputs are diode
protected.
The devices will not latch with SEU events above 100 Mev-cm2/mg. Total dose degradation is minimal to
above 1 Mrad(Si). Displacement damage environments to neutron fluence equivalents in the mid 1014
neutrons per cm2 range are readily tolerated. There is no sensitivity to low-dose rate (ELDRS) effects. SEU
effects are application dependent.
SCD5910
Rev G
1 Cobham Semiconductor Solutions
www.cobham.com/HiRel
1 page  
Note: Package and lid are electrically
isolated from signal pads.
SCD5910
Rev G 3/28/2016
FIGURE 4: PACKAGE OUTLINE
5
Cobham Semiconductor Solutions
www.cobham.com/HiRel
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet RHD5910.PDF ] | |
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