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RHD5912 fiches techniques PDF

Cobham Semiconductor - Quad Comparator

Numéro de référence RHD5912
Description Quad Comparator
Fabricant Cobham Semiconductor 
Logo Cobham Semiconductor 





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RHD5912 fiche technique
RadHard-by-Design Analog
RHD5912
Quad Comparator, Open Drain Outputs
Released Datasheet
Cobham.com/HiRel
March 28, 2016
The most important thing we build is trust
FEATURES
Single power supply operation at 3.3V or 5.0V
Radiation performance
- Total dose:
- ELDRS Immune
- SEL Immune
- Neutron Displacement Damage
> 1 Mrad(Si); Dose rate = 50-300 rad(Si)/s
> 100 MeV-cm2/mg
> 1014 neutrons/cm2
Short Circuit Tolerant
Full military temperature range
Designed for aerospace and high reliability space applications
Packaging – Hermetic ceramic SOIC
- 16-pin, .417"L x .300"W x .120"Ht
- Weight - 0.8 grams max
Radiation Hardness Assurance Plan: DLA Certified to MIL-PRF-38534, Appendix G.
GENERAL DESCRIPTION
The RHD5912 is a radiation hardened, single supply, quad comparator with open drain outputs in a 16-pin
SOIC package. The RHD5912 design uses specific circuit topology and layout methods to mitigate total
ionizing dose effects and single event latchup. These characteristics make the RHD5912 especially suited for
the harsh environment encountered in Deep Space missions. It is guaranteed operational from -55°C to
+125°C. Available screened in accordance with MIL-PRF-38534 Class K, the RHD5912 is ideal for
demanding military and space applications.
ORGANIZATION AND APPLICATION
The RHD5912 quad comparator is intended for operation with dynamic signals on either or both inputs.
Comparison is ’continuous’, that is, the circuit functions as high gain open loop amplifiers with a digital
output. For slow input signals with small input differences the comparators can be expected to respond to
small noise signals at the inputs. Although there is internal hysteresis, feedback hysteresis is the
responsibility of the user to avoid ’chattering’ on system noise.
The comparator will accept signals anywhere in the included power supply range. The circuit delay is
specified for a half-volt single ended or differential input step of either polarity ending in an input polarity
reversal of 10mV. See Switching Diagrams.
CMOS device drive has a negative temperature coefficient and the devices are therefore inherently tolerant
to momentary shorts, although on chip thermal shutdown is not provided. All inputs and outputs are diode
protected
The devices will not latch with SEU events above 100 Mev-cm2/mg. Total dose degradation is minimal to
above 1 Mrad(Si). Displacement damage environments to neutron fluence equivalents in the mid 1014
neutrons per cm2 range are readily tolerated. There is no sensitivity to low-dose rate (ELDRS) effects. SEU
effects are application dependent.
SCD5912
Rev D
1 Cobham Semiconductor Solutions
www.cobham.com/HiRel

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