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PDF AP83T03GJB Data sheet ( Hoja de datos )
| Número de pieza | AP83T03GJB | |
| Descripción | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AP83T03GJB (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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Advanced Power
Electronics Corp.
AP83T03GJB
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
S
Description
AP83T03 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-251S short lead package is preferred for all
commercial-industrial through-hole applications without lead-
cutted.
BVDSS
RDS(ON)
ID
30V
6mΩ
75A
GD S
TO-251S(JB)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
.Parameter
Rating
Units
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
30
+20
75
53
240
60
-55 to 175
-55 to 175
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
2.5
110
Units
℃/W
℃/W
1
201505271
1 page  
MARKING INFORMATION
83T03GJ
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
AP83T03GJB
.
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AP83T03GJB.PDF ] | |
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