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PDF AP9T18GH-HF Data sheet ( Hoja de datos )
| Número de pieza | AP9T18GH-HF | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP9T18GH-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
▼ Capable of 2.5V Gate Drive
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
D
G
S
Description
AP9T18 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited
for high current application due to the low connection resistance.
BVDSS
RDS(ON)
ID
20V
14mΩ
38A
G DS
TO-252(H)
Absolute
Symbol
Maximum
RatingPsa@ramTej=te2r 5oC. (unless
otherwise specified)
Rating
Units
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 4.5V
Drain Current, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
20 V
+16 V
38 A
24 A
140 A
31.3 W
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Data and specifications subject to change without notice
Value
4
62.5
Units
℃/W
℃/W
1
201409014
1 page  
MARKING INFORMATION
9T18GH
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
AP9T18GH-HF
.
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AP9T18GH-HF.PDF ] | |
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