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Numéro de référence | AM12N50P | ||
Description | N-Channel MOSFET | ||
Fabricant | Analog Power | ||
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Analog Power
N-Channel 500-V (D-S) MOSFET
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• Off-line Power Supplies
• Electronic Ballasts
• High Power LED Lighting
AM12N50P
PRODUCT SUMMARY
VDS (V)
rDS(on) (mΩ)
500 520 @ VGS = 10V
ID (A)
12a
DRAIN
connected
to TAB
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 500
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
TC=25°C
VGS
ID
IDM
IS
±20
12
50
12
Power Dissipation
TC=25°C
PD
150
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
Units
V
A
A
W
°C
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RθJA
RθJC
Maximum
62.5
1
Units
°C/W
Notes
a. Calculated continuous current based on maximum allowable junction temperature.
b. Pulse width limited by maximum junction temperature
© Preliminary
1 Publication Order Number:
DS_AM12N50P_1A
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Pages | Pages 5 | ||
Télécharger | [ AM12N50P ] |
No | Description détaillée | Fabricant |
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