|
|
Numéro de référence | AM12N65PCFM | ||
Description | N-Channel MOSFET | ||
Fabricant | Analog Power | ||
Logo | |||
Analog Power
N-Channel 650-V (D-S) MOSFET
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• Power Supplies
• Motor Drives
• Consumer Electronics
AM12N65PCFM
VDS (V)
650
PRODUCT SUMMARY
rDS(on) (mΩ)
800 @ VGS = 10V
850 @ VGS = 6V
ID (A)
7
6.5
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 650
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TC=25°C
TC=25°C
VGS
ID
IDM
IS
PD
±20
7
30
7
60
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
Units
V
A
A
W
°C
Maximum Junction-to-Ambient c
Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RθJA
RθJC
Maximum
62.5
2.5
Units
°C/W
Notes
a. Package Limited
b. Pulse width limited by maximum junction temperature
c. Surface Mounted on 1” x 1” FR4 Board.
© Preliminary
1 Publication Order Number:
DS_AM12N65PCFM_1A
|
|||
Pages | Pages 5 | ||
Télécharger | [ AM12N65PCFM ] |
No | Description détaillée | Fabricant |
AM12N65PCFM | N-Channel MOSFET | Analog Power |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |