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AM12N65PCFM fiches techniques PDF

Analog Power - N-Channel MOSFET

Numéro de référence AM12N65PCFM
Description N-Channel MOSFET
Fabricant Analog Power 
Logo Analog Power 





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AM12N65PCFM fiche technique
Analog Power
N-Channel 650-V (D-S) MOSFET
Key Features:
Low rDS(on) trench technology
Low thermal impedance
Fast switching speed
Typical Applications:
Power Supplies
Motor Drives
Consumer Electronics
AM12N65PCFM
VDS (V)
650
PRODUCT SUMMARY
rDS(on) (mΩ)
800 @ VGS = 10V
850 @ VGS = 6V
ID (A)
7
6.5
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 650
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TC=25°C
TC=25°C
VGS
ID
IDM
IS
PD
±20
7
30
7
60
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
Units
V
A
A
W
°C
Maximum Junction-to-Ambient c
Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RθJA
RθJC
Maximum
62.5
2.5
Units
°C/W
Notes
a. Package Limited
b. Pulse width limited by maximum junction temperature
c. Surface Mounted on 1” x 1” FR4 Board.
© Preliminary
1 Publication Order Number:
DS_AM12N65PCFM_1A

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