(PDF) AM9N50P Datasheet - N-Channel MOSFET

Número de pieza	AM9N50P
Descripción	N-Channel MOSFET
Fabricantes	Analog Power
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No Preview Available ! Analog Power N-Channel 500-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Off-line Power Supplies • Electronic Ballasts • High Power LED Lighting AM9N50P PRODUCT SUMMARY VDS (V) rDS(on) (mΩ) 500 750 @ VGS = 10V ID (A) 9a DRAIN connected to TAB ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 500 Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TC=25°C VGS ID IDM IS ±20 9 40 9 Power Dissipation TC=25°C PD 150 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 Units V A A W °C Maximum Junction-to-Ambient a Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 62.5 1 Units °C/W Notes a. Calculated continuous current based on maximum allowable junction temperature. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM9N50P_1A 1 page Analog Power Package Information AM9N50P © Preliminary 5 Publication Order Number: DS_AM9N50P_1A 5 Page

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PDF AM9N50P Data sheet ( Hoja de datos )