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AM90N06-04D fiches techniques PDF

Analog Power - N-Channel MOSFET

Numéro de référence AM90N06-04D
Description N-Channel MOSFET
Fabricant Analog Power 
Logo Analog Power 





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AM90N06-04D fiche technique
Analog Power
N-Channel 60-V (D-S) MOSFET
Key Features:
Low rDS(on) trench technology
Low thermal impedance
Fast switching speed
Typical Applications:
White LED boost converters
Automotive Systems
Industrial DC/DC Conversion Circuits
AM90N06-04D
VDS (V)
60
PRODUCT SUMMARY
rDS(on) (mΩ)
4.8 @ VGS = 10V
5.8 @ VGS = 4.5V
ID (A)
83
76
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 60
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TC=25°C
TC=25°C
VGS
ID
IDM
IS
PD
±20
83
300
40
50
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
Units
V
A
A
W
°C
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RθJA
RθJC
Maximum
40
3
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
© Preliminary
1 Publication Order Number:
DS_AM90N06-04D_1A

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