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Numéro de référence | AM8N80P | ||
Description | N-Channel MOSFET | ||
Fabricant | Analog Power | ||
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Analog Power
N-Channel 800-V (D-S) MOSFET
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• Power Supplies
• Motor Drives
• Consumer Electronics
AM8N80P
VDS (V)
800
PRODUCT SUMMARY
rDS(on) (Ω)
1.5 @ VGS = 10V
ID (A)
8a
DRAIN
connected
to TAB
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 800
Gate-Source Voltage
Continuous Drain Current a
TC=25°C
VGS
ID
±20
8
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TC=25°C
TC=25°C
IDM
IS
PD
50
8
300
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
Units
V
A
A
W
°C
Maximum Junction-to-Ambient C
Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RθJA
RθJC
Maximum
62.5
0.5
Units
°C/W
Notes
a. Package Limited
b. Pulse width limited by maximum junction temperature
c. Surface Mounted on 1” x 1” FR4 Board.
© Preliminary
1 Publication Order Number: DS_AM8N80P_1A
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Pages | Pages 5 | ||
Télécharger | [ AM8N80P ] |
No | Description détaillée | Fabricant |
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