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Analog Power - N-Channel MOSFET

Numéro de référence AM5N50
Description N-Channel MOSFET
Fabricant Analog Power 
Logo Analog Power 





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AM5N50 fiche technique
Analog Power
N-Channel 500-V (D-S) MOSFET
Key Features:
Low rDS(on) technology
Low thermal impedance
Fast switching speed
Typical Applications:
Electronic ballast
Electronic transformer
Switch mode power supply
AM5N50
VDS (V)
500
PRODUCT SUMMARY
rDS(on) (Ω)
1.5 @ VGS = 10V
ID(A)
4.5
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 500
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TC=25°C
TC=25°C
VGS
ID
IDM
IS
PD
±20
4.5
18
4.5
74
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
Units
V
A
A
W
°C
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RθJA
RθJC
Maximum
62.5
1.7
Units
°C/W
Notes
a. Package limited
b. Pulse width limited by maximum junction temperature
© Preliminary
1 Publication Order Number:
DS-AM5N50_2010

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