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Numéro de référence | AM5N50 | ||
Description | N-Channel MOSFET | ||
Fabricant | Analog Power | ||
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Analog Power
N-Channel 500-V (D-S) MOSFET
Key Features:
• Low rDS(on) technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• Electronic ballast
• Electronic transformer
• Switch mode power supply
AM5N50
VDS (V)
500
PRODUCT SUMMARY
rDS(on) (Ω)
1.5 @ VGS = 10V
ID(A)
4.5
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 500
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TC=25°C
TC=25°C
VGS
ID
IDM
IS
PD
±20
4.5
18
4.5
74
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
Units
V
A
A
W
°C
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RθJA
RθJC
Maximum
62.5
1.7
Units
°C/W
Notes
a. Package limited
b. Pulse width limited by maximum junction temperature
© Preliminary
1 Publication Order Number:
DS-AM5N50_2010
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Pages | Pages 5 | ||
Télécharger | [ AM5N50 ] |
No | Description détaillée | Fabricant |
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