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AM10P10-530D fiches techniques PDF

Analog Power - P-Channel MOSFET

Numéro de référence AM10P10-530D
Description P-Channel MOSFET
Fabricant Analog Power 
Logo Analog Power 





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AM10P10-530D fiche technique
Analog Power
P-Channel 100-V (D-S) MOSFET
Key Features:
Low rDS(on) trench technology
Low thermal impedance
Fast switching speed
Typical Applications:
White LED boost converters
Automotive Systems
Industrial DC/DC Conversion Circuits
AM10P10-530D
VDS (V)
-100
PRODUCT SUMMARY
rDS(on) (mΩ)
530 @ VGS = -10V
720 @ VGS = -4.5V
ID(A)
-6.9
-6.0
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS -100
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TA=25°C
TA=25°C
VGS
ID
IDM
IS
PD
±20
-6.9
-50
-6.9
50
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units
V
A
A
W
°C
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RθJA
RθJC
Maximum
40
3
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
© Preliminary
1 Publication Order Number:
DS_AM10P10-530D_1A

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