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PDF AM20N10-350D Data sheet ( Hoja de datos )
| Número de pieza | AM20N10-350D | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Analog Power | |
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Analog Power
N-Channel 100-V (D-S) MOSFET
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
AM20N10-350D
VDS (V)
100
PRODUCT SUMMARY
rDS(on) (mΩ)
420 @ VGS = 10V
460 @ VGS = 5.5V
ID(A)
9.0
8.6
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 100
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TA=25°C
TA=25°C
VGS
ID
IDM
IS
PD
±20
9.0
50
33.6
50
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
Units
V
A
A
W
°C
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RθJA
RθJC
Maximum
40
3
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
© Preliminary
1 Publication Order Number:
DS_AM20N10-350D_1A
1 page  
Analog Power
Package Information
AM20N10-350D
Note:
1. All Dimension Are In mm.
2. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or Gate Burrs Shall
Not Exceed 0.10 mm Per Side.
3. Package Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of Mold Flash, Gate
Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The Plastic Body.
© Preliminary
5 Publication Order Number:
DS_AM20N10-350D_1A
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AM20N10-350D.PDF ] | |
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