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PDF AM20N15-250D Data sheet ( Hoja de datos )

Número de pieza AM20N15-250D
Descripción N-Channel MOSFET
Fabricantes Analog Power 
Logotipo Analog Power Logotipo



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No Preview Available ! AM20N15-250D Hoja de datos, Descripción, Manual

Analog Power
N-Channel 150-V (D-S) MOSFET
Key Features:
Low rDS(on) trench technology
Low thermal impedance
Fast switching speed
Typical Applications:
PoE Power Sourcing Equipment
PoE Powered Devices
Telecom DC/DC converters
White LED boost converters
AM20N15-250D
VDS (V)
150
PRODUCT SUMMARY
rDS(on) (mΩ)
255 @ VGS = 10V
290 @ VGS = 4.5V
ID(A)
12
11
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 150
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current b
TC=25°C
ID
IDM
10
50
Continuous Source Current (Diode Conduction)
IS 45
Power Dissipation
TC=25°C
PD
50
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
Units
V
A
A
W
°C
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RθJA
RθJC
Maximum
50
3
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
© Preliminary
1 Publication Order Number:
DS-AM20N15-250D-1A

1 page




AM20N15-250D pdf
Analog Power
Package Information
AM20N15-250D
Note:
1. All Dimension Are In mm.
2. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or Gate Burrs Shall Not
Exceed 0.10 mm Per Side.
3. Package Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of Mold Flash, Gate
Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The Plastic Body.
© Preliminary
5 Publication Order Number:
DS-AM20N15-250D-1A

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