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PDF AM30N20-400P Data sheet ( Hoja de datos )
| Número de pieza | AM30N20-400P | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Analog Power | |
| Logotipo |  |
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Analog Power
N-Channel 200-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, and communication equipments.
• Low rDS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
TO-220 saves board space
• Fast switching speed
• High performance trench technology
AM30N20-400P
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
200 400 @ VGS = 10V
450 @ VGS = 5.5V
ID (A)
23a
D1
G1
S1
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Limit Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
Continuous Source Current (Diode Conduction)a
Power Dissipationa
Operating Junction and Storage Temperature Range
VDS
VGS
TC=25oC ID
IDM
IS
TC=25oC PD
TJ, Tstg
200
±20
23
240
90
300
-55 to 175
V
A
A
W
oC
THERMALRESISTANCERATINGS
Parameter
Symbol
MaximumJunction-to-Ambienta
RθJA
MaximumJunction-to-Case
RθJC
Notes
a. Package Limited
b. Pulse width limited by maximum junction temperature
Maximum Units
62.5 oC/W
0.5 oC/W
PRELIMINARY
1 Publication Order Number:
DS-AM90N03-08_A
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet AM30N20-400P.PDF ] | |
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