(PDF) AM2N60B Datasheet - N-Channel MOSFET

Número de pieza	AM2N60B
Descripción	N-Channel MOSFET
Fabricantes	Analog Power
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No Preview Available ! Analog Power N-Channel 600-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Off-line Power Supplies • Electronic Ballasts • High Power LED Lighting AM2N60B PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 600 4.4 @ VGS = 10V ID(A) 2.2a ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current a TC=25°C ID IDM 2.2 10 Continuous Source Current (Diode Conduction) TC=25°C IS 2.2 Power Dissipation TC=25°C PD 150 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 Units V A A W °C Maximum Junction-to-Ambient Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 62.5 1 Units °C/W Notes a. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM2N60B_1A 1 page Analog Power Package Information AM2N60B © Preliminary 5 Publication Order Number: DS_AM2N60B_1A 5 Page

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PDF AM2N60B Data sheet ( Hoja de datos )