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PDF AM20P03-60D Data sheet ( Hoja de datos )
| Número de pieza | AM20P03-60D | |
| Descripción | P-Channel MOSFET | |
| Fabricantes | Analog Power | |
| Logotipo |  |
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Analog Power
P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
• Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
• Miniature TO-251 Surface Mount Package
Saves Board Space
• High power and current handling capability
• Extended VGS range (±25) for battery pack
applications
AM20P03-60I
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
-30 59 @ VGS = -10V
95 @ VGS = -4.5V
ID (A)
24
19
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TA=25oC ID
IDM
-30 V
±25
24 A
±40
Continuous Source Current (Diode Conduction)a
IS -30 A
Power Dissipationa
Operating Junction and Storage Temperature Range
TA=25oC PD
50
TJ, Tstg -55 to 175
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
RθJA
Maximum Junction-to-Case
RθJC
Maximum
50
3.0
Units
oC/W
oC/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
January, 2005 - Rev. A
PRELIMINARY
1 Publication Order Number:
DS-AM20P03-60I_C
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet AM20P03-60D.PDF ] | |
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