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Número de pieza | AM160N03-03D | |
Descripción | N-Channel MOSFET | |
Fabricantes | Analog Power | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AM160N03-03D (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Analog Power
N-Channel 30-V (D-S) MOSFET
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• Automotive Systems
• DC/DC Conversion Circuits
• Battery Powered Power Tools
AM160N03-03D
PRODUCT SUMMARY
VDS (V)
rDS(on) (mΩ)
30 3.9 @ VGS = 10V
ID (A)
93
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 30
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TC=25°C
TC=25°C
VGS
ID
IDM
IS
PD
±20
93
350
93
50
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
Units
V
A
A
W
°C
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RθJA
RθJC
Maximum
40
3
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
© Preliminary
1 Publication Order Number:
DS_AM160N03-03D_1A
1 page Analog Power
Package Information
AM160N03-03D
Note:
1. All Dimension Are In mm.
2. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or Gate Burrs Shall
Not Exceed 0.10 mm Per Side.
3. Package Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of Mold Flash, Gate
Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The Plastic Body.
© Preliminary
5 Publication Order Number:
DS_AM160N03-03D_1A
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet AM160N03-03D.PDF ] |
Número de pieza | Descripción | Fabricantes |
AM160N03-03D | N-Channel MOSFET | Analog Power |
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