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PDF AM2300N Data sheet ( Hoja de datos )
| Número de pieza | AM2300N | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Analog Power | |
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Analog Power
N-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize High Cell Density process. Low rDS(on)
assures minimal power loss and conserves
energy, making this device ideal for use in
power management circuitry. Typical
applications are DC-DC converters, power
management in portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
• Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
• Low gate charge 7nC
• High performance
• High current handling
• Miniature SOT-23 Surface Mount Package
Saves Board Space
AM2300N
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
20
0.035 @ VGS = 4.5V
0.050 @ VGS = 2.5V
ID (A)
4.3
3.5
G
D
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TA=25oC
TA=70oC
ID
IDM
20
±8
4.3
3.3
10
Continuous Source Current (Diode Conduction)a
IS 0.46
Power Dissipationa
TA=25oC
TA=70oC
PD
1.25
0.8
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units
V
A
A
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t <= 5 sec
Steady-State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
July, 2002 - Rev. A
PRELIMINARY
1
Symbol
RTHJA
Maximum
100
166
Units
oC/W
Publication Order Number:
DS-AM2300_D
1 page  
Analog Power
AM2300N
Package Information
July, 2002 - Rev. A
PRELIMINARY
5 Publication Order Number:
DS-AM2300_D
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AM2300N.PDF ] | |
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