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PDF AM2306NE Data sheet ( Hoja de datos )
| Número de pieza | AM2306NE | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Analog Power | |
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Analog Power
AM2306NE
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
30 58 @ VGS = 10V
82 @ VGS = 4.5V
SOT-23
Top View
ID (A)
3.5
3.0
D
• Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
• Miniature SOT-23 Surface Mount Package
Saves Board Space
G
• High power and current handling capability
• Low side high current DC-DC Converter
S
applications
ESD Protected
G
D
S
N-Channel
MOSFET
2000V
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Limit Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
Continuous Source Current (Diode Conduction)a
Power Dissipationa
Operating Junction and Storage Temperature Range
VDS
VGS
TA=25oC
TA=70oC
ID
IDM
IS
TA=25oC
TA=70oC
PD
TJ, Tstg
30
±20
3.5
2.8
16
1.25
1.3
0.8
-55 to 150
V
A
A
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t <= 10 sec
Steady-State
Symbol
RθJA
Maximum
100
166
Units
oC/W
oC/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1 Publication Order Number:
DS-AM2306E_A
1 page  
Analog Power
AM2306NE
Package Information
PRELIMINARY
5 Publication Order Number:
DS-AM2306E_A
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AM2306NE.PDF ] | |
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