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PDF AM7540C Data sheet ( Hoja de datos )
| Número de pieza | AM7540C | |
| Descripción | P & N-Channel MOSFET | |
| Fabricantes | Analog Power | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AM7540C (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Analog Power
AM7540C
P & N-Channel 40-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, cellular and cordless telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
40 46 @ VGS = 4.5V
36 @ VGS = 10V
-40 55 @ VGS = -4.5V
39 @ VGS = -10V
ID (A)
7.2
8.1
-6.6
-7.8
• Low rDS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
DFN5x6 saves board space
• Fast switching speed
• High performance trench technology
SOIC-8PP
Top View
D1
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1 G1
6 D2
5
D2
S1
N-Channel MOSFET
S2
G2
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol N-Channel P-Channel Units
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Currenta
TA=25oC
TA=70oC
ID
Pulsed Drain Currentb
IDM
Continuous Source Current (Diode Conduction)a
IS
Power Dissipationa
TA=25oC
TA=70oC
PD
Operating Junction and Storage Temperature Range TJ, Tstg
40
20
8.1
6.6
±20
2.9
3.5
2.2
-55 to 150
-40
-20
-7.8
-6.4
±20
-2.9
3.5
2.2
-55 to 150
V
A
A
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t <= 10 sec
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol
RθJA
Maximum
35
85
Units
oC/W
oC/W
PRELIMINARY
1 Publication Order Number:
DS-AM7540_A
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet AM7540C.PDF ] | |
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