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PDF AM7423P Data sheet ( Hoja de datos )

Número de pieza AM7423P
Descripción P-Channel MOSFET
Fabricantes Analog Power 
Logotipo Analog Power Logotipo



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Analog Power
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
• Low rDS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
SOIC-8 saves board space
• Fast switching speed
• High performance trench technology
AM7423P
PRODUCT SUMMARY
VDS (V)
rDS(on) m()
-20 5 @ VGS = -4.5V
7 @ VGS = -2.5V
SOIC-8PP
Top View
ID (A)
-26
-22
S
S1
S2
S3
G4
8D
7D
G
6D
5D
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
Continuous Source Current (Diode Conduction)a
Power Dissipationa
Operating Junction and Storage Temperature Range
VDS
VGS
TA=25oC
TA=70oC
ID
-20
±8
-26
-22
IDM ±50
IS
TA=25oC
TA=70oC
PD
-2.1
5.0
3.2
TJ, Tstg -55 to 150
V
A
A
W
oC
THERMALRESISTANCERATINGS
Parameter
MaximumJunction-to-Ambienta
t <=10 sec
Steady State
Symbol
RθJA
Maximum Units
25 oC/W
65 oC/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1 Publication Order Number:
DS-AM7423_A

1 page





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