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PDF AM7343P Data sheet ( Hoja de datos )
| Número de pieza | AM7343P | |
| Descripción | P-Channel MOSFET | |
| Fabricantes | Analog Power | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AM7343P (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Analog Power
P-Channel 40-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, cellular and cordless telephones.
• Low rDS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
DFN3x3-8PP saves board space
• Fast switching speed
• High performance trench technology
AM7343P
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
-40 12 @ VGS = -10V
18 @ VGS = -4.5V
DFN3x3-8PP
Top View
S1
S2
S3
G4
8
7
6
5
ID (A)
-14
-12
S
D
DG
D
DD
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
Continuous Source Current (Diode Conduction)a
Power Dissipationa
Operating Junction and Storage Temperature Range
VDS
VGS
TA=25oC
TA=70oC
ID
-40
±20
-14
-12
IDM ±50
IS
TA=25oC
TA=70oC
PD
-2.1
3.5
2.0
TJ, Tstg -55 to 150
V
A
A
W
oC
THERMALRESISTANCERATINGS
Parameter
MaximumJunction-to-Ambienta
t <=10 sec
Steady State
Symbol
RθJA
Maximum Units
35 oC/W
81 oC/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1 Publication Order Number:
DS-AM7343_A
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet AM7343P.PDF ] | |
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