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AM6520C fiches techniques PDF

Analog Power - P & N-Channel MOSFET

Numéro de référence AM6520C
Description P & N-Channel MOSFET
Fabricant Analog Power 
Logo Analog Power 





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AM6520C fiche technique
Analog Power
AM6520C
P & N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY
These miniature surface mount MOSFETs utilize
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
VDS (V)
20
-20
rDS(on) m()
47 @ VGS = 4.5V
66 @ VGS = 2.5V
95 @ VGS = 1.8V
47 @ VGS = -4.5V
72 @ VGS = -2.5V
95 @ VGS = -1.8V
• Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
TSSOP-8
Top View
D1
• Miniature TSSOP-8 Surface Mount Package D1 1
Saves Board Space
S1 2
S1 3
• High power and current handling capability G1 4
• Low side high current DC-DC Converter
8 D2
7 S2
G1
6 S2
5 G2
S1
N-Channel MOSFET
applications
ID (A)
4.7
3.9
3.3
-4.7
-3.8
-3.3
S2
G2
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol N-Channel P-Channel Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TA=25oC
TA=70oC
ID
IDM
20
8
-20
-8
V
4.7 -4.7
3.8 -3.8 A
±50 ±50
Continuous Source Current (Diode Conduction)a
IS
2.3 -2.3 A
Power Dissipationa
TA=25oC
TA=70oC
PD
Operating Junction and Storage Temperature Range TJ, Tstg
2.1
1.3
-55 to 150
2.1
1.3
-55 to 150
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t <= 10 sec
Steady State
Symbol
RthJA
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Typ
72
100
Max
83
120
oC/W
November, 2005 - Rev. A
PRELIMINARY
1 Publication Order Number:
DS-AM6520_A

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