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PDF AM6411P Data sheet ( Hoja de datos )
| Número de pieza | AM6411P | |
| Descripción | P-Channel MOSFET | |
| Fabricantes | Analog Power | |
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Analog Power
AM6411P
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
13 @ VGS = -4.5V
-20 19 @ VGS = -2.5V
35 @ VGS = -1.8V
TSSOP-8
Top View
ID (A)
-9.5
-7.9
-5.8
S
•
Low rDS(on) provides higher efficiency and
extends battery life
D
S
• Low thermal impedance copper leadframe S
TSSOP-8 saves board space
G
• Fast switching speed
• High performance trench technology
1
2
3
4
8D
G
7S
6S
5
DD
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TA=25oC
TA=70oC
ID
IDM
-20
±12
-9.5
-7.7
-30
Continuous Source Current (Diode Conduction)a
IS -1.5
Power Dissipationa
TA=25oC
TA=70oC
PD
1.8
1.2
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units
V
A
A
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t <= 10 sec
Steady State
Symbol
RθJA
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Maximum
70
115
Units
oC/W
PRELIMINARY
1 Publication Order Number:
DS-AM6411_D
1 page  
Analog Power
Package Information
TSSOP-8: 8LEAD
AM6411P
PRELIMINARY
5 Publication Order Number:
DS-AM6411_D
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AM6411P.PDF ] | |
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