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PDF AM4970N Data sheet ( Hoja de datos )

Número de pieza AM4970N
Descripción Dual N-Channel MOSFET
Fabricantes Analog Power 
Logotipo Analog Power Logotipo



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Analog Power
AM4970N
Dual N-Channel 200-V (D-S) MOSFET
Key Features:
Low rDS(on) trench technology
Low thermal impedance
Fast switching speed
Typical Applications:
PoE PSE and PD Circuits
LED Inverter Circuits
48V-Input DC/DC Conversion Circuits
VDS (V)
200
PRODUCT SUMMARY
rDS(on) (mΩ)
300 @ VGS = 10V
340 @ VGS = 4.5V
ID (A)
2.2
2.1
SO-8
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 200
Gate-Source Voltage
VGS ±20
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
TA=25°C
TA=70°C
ID
IDM
IS
2.2
1.7
30
2.9
Power Dissipation a
TA=25°C
TA=70°C
PD
2.1
1.3
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units
V
A
A
W
°C
Maximum Junction-to-Ambient a
THERMAL RESISTANCE RATINGS
Parameter
t <= 10 sec
Steady State
Symbol Maximum
RθJA
62.5
110
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
© Preliminary
1 Publication Order Number:
DS_AM4970N_1A

1 page




AM4970N pdf
Analog Power
Package Information
AM4970N
Note:
1. All Dimension Are In mm.
2. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or Gate Burrs Shall
Not Exceed 0.10 mm Per Side.
3. Package Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of Mold Flash, Tie
Bar Burrs, Gate Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The
Plastic Body.
4. The Package Top May Be Smaller Than The Package Bottom.
5. Dimension "B" Does Not Include Dambar Protrusion. Allowable Dambar Protrusion Shall Be 0.08 mm Total In
Excess Of "B" Dimension At Maximum Material Condition. The Dambar Cannot Be Located On The Lower Radius
Of The Foot.
© Preliminary
5 Publication Order Number:
DS_AM4970N_1A

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