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PDF AM2313P Data sheet ( Hoja de datos )
| Número de pieza | AM2313P | |
| Descripción | P-Channel MOSFET | |
| Fabricantes | Analog Power | |
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Analog Power
AM2313P
P - Channel Logic Level MOSFET
These miniature surface mount MOSFETs
utilize High Cell Density process. Low
rDS(on) assures minimal power loss and
conserves energy, making this device ideal
for use in power management circuitry.
Typical applications are voltage control
small signal switch, power management in
portable and battery-powered products and
most low current high side switch.
• Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
• Fast Switch
• Low Gate Charge
• High Saturation Current
• Miniature SOT-23 Surface Mount Package
Saves Board Space
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
-60 10 @ VGS = -10 V
20 @ VGS = -4.5V
G
S
ID (A)
-0.2
-0.12
D
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TA=25oC
TA=70oC
ID
IDM
-60
±20
±0.12
±0.09
±1
V
A
Continuous Source Current (Diode Conduction)a
IS 0.24 A
Power Dissipationa
Operating Junction and Storage Temperature Range
TA=25oC
TA=70oC
PD
TJ, Tstg
0.36
0.29
-55 to 150
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t <= 5 sec
Steady-State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
July, 2002 - Rev. A
PRELIMINARY
1
Symbol
RT HJA
Maximum Units
350
400
oC/W
Publication Order Number:
DS-AM2313_B
1 page  
Analog Power
AM2313P
Package Information
July, 2002 - Rev. A
PRELIMINARY
5 Publication Order Number:
DS-AM2313_B
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AM2313P.PDF ] | |
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