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PDF AM2327P Data sheet ( Hoja de datos )
| Número de pieza | AM2327P | |
| Descripción | P-Channel MOSFET | |
| Fabricantes | Analog Power | |
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Analog Power
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are DC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
• Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
• Miniature SOT-23 Surface Mount Package
Saves Board Space
• Fast switching speed
• High performance trench technology
AM2327P
PRODUCT SUMMARY
VDS (V)
-20
rDS(on) (OHM)
0.052 @ VGS = -4.5V
0.072 @ VGS = -2.5V
0.120 @ VGS = -1.8V
ID (A)
-3.6
-3.1
-2.7
G
D
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Ratings Units
Drain-Source Voltage
Gate-Source Voltage
VDS -20 V
VGS ±8
Continuous Drain Currenta
TA=25oC
TA=70oC
ID
-3.6
-1.8 A
Pulsed Drain Currentb
IDM -10
Continuous Source Current (Diode Conduction)a
IS ±0.46 A
Power Dissipationa
Operating Junction and Storage Temperature Range
TA=25oC
TA=70oC
PD
TJ, Tstg
1.25
0.8
-55 to 150
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t <= 5 sec
Steady-State
Symbol
RTHJA
Maximum
100
150
Units
oC/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
July, 2002 - Rev. A
PRELIMINARY
1
Publication Order Number:
DS-AM2327_H
1 page  
Analog Power
AM2327P
Package Information
July, 2002 - Rev. A
PRELIMINARY
5 Publication Order Number:
DS-AM2327_H
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AM2327P.PDF ] | |
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