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PDF AM2326N Data sheet ( Hoja de datos )
| Número de pieza | AM2326N | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Analog Power | |
| Logotipo |  |
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Analog Power
N-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize High Cell Density process. Low
rDS(on) assures minimal power loss and
conserves energy, making this device ideal
for use in power management circuitry.
Typical applications are DC-DC
converters, power management in portable
and battery-powered products such as
computers, printers, PCMCIA cards,
cellular and cordless telephones.
• Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
• Miniature SOT-23 Surface Mount Package
Saves Board Space
AM2326N
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
0.070 @ VGS = 4.5V
20 0.080@ VGS = 2.5V
0.120@ VGS = 1.8V
ID (A)
2.2
2.0
1.8
G
D
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TA=25oC
TA=70oC
ID
IDM
20 V
±8
2.2
1.8 A
8
Continuous Source Current (Diode Conduction)a
IS 0.6 A
Power Dissipationa
Operating Junction and Storage Temperature Range
TA=25oC
TA=70oC
PD
TJ, Tstg
1.25
0.8
-55 to 150
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t <= 5 sec
Steady-State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
July, 2002 - Rev. A
PRELIMINARY
1
Symbol
RT HJA
Maximum
100
166
Units
oC/W
Publication Order Number:
DS-AM2326_C
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet AM2326N.PDF ] | |
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