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PDF AM2324N Data sheet ( Hoja de datos )
| Número de pieza | AM2324N | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Analog Power | |
| Logotipo |  |
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Analog Power
N-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low rDS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and
power management in portable and
battery-powered products such as
computers, printers, PCMCIA cards,
cellular and cordless telephones.
• Low rDS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
SOT-23 saves board space
• Fast switching speed
• High performance trench technology
AM2324N
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
0.047 @ VGS = 4.5V
20 0.055@ VGS = 2.5V
0.087@ VGS = 1.8V
ID (A)
4.3
4.0
3.2
G
D
S
ABSOLUTE MAXIMUMRATINGS (TA = 25 oCUNLESS OTHERWISE NOTED)
Parameter
Symbol Ratings Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TA=25oC
TA=70oC
ID
IDM
20
V
±8
4.3
3.6 A
10
Continuous Source Current (Diode Conduction)a
IS 1.6 A
Power Dissipationa
Operating Junction and Storage Temperature Range
TA=25oC
TA=70oC
PD
1.3
0.9
TJ, Tstg -55 to 150
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Notes
t <= 5 sec
Steady-State
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1
Symbol Maximum
RT HJA
100
166
Units
oC/W
Publication Order Number:
DS-AM2324_H
1 page  
Analog Power
AM2324N
Package Information
PRELIMINARY
5 Publication Order Number:
DS-AM2324_H
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AM2324N.PDF ] | |
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