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PDF AM2322N Data sheet ( Hoja de datos )
| Número de pieza | AM2322N | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Analog Power | |
| Logotipo |  |
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Analog Power
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
• Low rDS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
SOT-23 saves board space
• Fast switching speed
• High performance trench technology
AM2322N
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
30 0.085 @ VGS = 10V
0.125 @ VGS = 4.5V
ID (A)
2.5
1.7
G
D
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum
Drain-Source Voltage
VDS 30
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VGS
TA=25oC
TA=70oC
ID
IDM
±20
2.5
2
10
Continuous Source Current (Diode Conduction)a
IS 0.46
Power Dissipationa
TA=25oC
TA=70oC
PD
1.25
0.8
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units
V
A
A
W
oC
THERMAL RESISTANCE RATINGS
Parame te r
Maximum Junction-to-Ambienta
t <= 5 sec
Steady-State
Symbol
RT HJA
Maximum
150
200
Units
oC/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1 Publication Order Number:
DS-AM2322_F
1 page  
Analog Power
AM2322N
Package Information
PRELIMINARY
5 Publication Order Number:
DS-AM2322_F
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AM2322N.PDF ] | |
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