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PDF AM7920N Data sheet ( Hoja de datos )
| Número de pieza | AM7920N | |
| Descripción | Dual N-Channel MOSFET | |
| Fabricantes | Analog Power | |
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Analog Power
AM7920N
Dual N-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
• Low rDS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
SOIC-8PP saves board space
• Fast switching speed
• High performance trench technology
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
20
SOIC-8PP
Top View
10 @ VGS = 4.5V
13 @ VGS = 2.5V
D1
ID (A)
33
29
D1
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1 G1
G1
6
5
D2
D2
S1
N-Channel MOSFET
S1
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Paramete r
Symbol Limit
Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TA=25oC
TA=70oC
ID
IDM
20 V
8
33
27 A
±50
Continuous Source Current (Diode Conduction)a
IS
13 A
Power Dissipationa
TA=25oC
TA=70oC
PD
Operating Junction and Storage Temperature Range TJ, Tstg
16
10
-55 to 150
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t <= 10 sec
Steady State
Symbol
RθJA
RθJC
Maximum
35
8
Units
oC/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1 Publication Order Number:
DS-AM7920_A
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet AM7920N.PDF ] | |
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