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PDF AMS530C Data sheet ( Hoja de datos )
| Número de pieza | AMS530C | |
| Descripción | N & P-Channel MOSFET | |
| Fabricantes | Analog Power | |
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Analog Power
AMS530C
P & N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
30 50 @ VGS = 10V
83 @ VGS = 4.5V
-30 72 @ VGS = -10V
105 @ VGS = -4.5V
ID (A)
5.8
4.5
-4.9
-4.0
• Low rDS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
DFN3x3-8 saves board space
• Fast switching speed
• High performance trench technology
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol N-Channel P-Channel Units
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Currenta
TA=25oC
TA=70oC
ID
Pulsed Drain Currentb
IDM
Continuous Source Current (Diode Conduction)a
IS
Power Dissipationa
TA=25oC
TA=70oC
PD
Operating Junction and Storage Temperature Range TJ, Tstg
30
20
5.8
4.8
±20
2.9
3.5
2.2
-55 to 150
-30
-20
-4.9
-4
±20
-2.9
2.5
1.3
-55 to 150
V
A
A
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t <= 10 sec
Steady State
Symbol
RθJA
Maximum
35
85
Units
oC/W
oC/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1 Publication Order Number:
DS-AMS530_A
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet AMS530C.PDF ] | |
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