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PDF AMD540CE Data sheet ( Hoja de datos )
| Número de pieza | AMD540CE | |
| Descripción | N & P-Channel MOSFET | |
| Fabricantes | Analog Power | |
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Hay una vista previa y un enlace de descarga de AMD540CE (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Analog Power
AMD540CE
P & N-Channel 40-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
40 46 @VGS = 4.5V
36 @VGS =10V
-40 48 @VGS =-4.5V
38 @VGS = -10V
ID (A)
28
33
-28
-33
• Low rDS(on) provides higher efficiency and
extends battery life
D1
• Low thermal impedance copper leadframe
DPAK saves board space
G
1
• Fast switching speed
• High performance trench technology
S1 G1 D S2 G2
S
1
N-Channel MOSFET
ESD Protected
2000V
S
2
G
2
D2
P-Channel MOSFET
ABSOLUTE MAXIMUMRATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter
Symbol N-Channel P-Channel Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TA=25oC ID
IDM
40 -40 V
20 -20
33 -33 A
±40 ±40
Continuous Source Current (Diode Conduction)a
IS
30 -30 A
Power Dissipationa
TA=25oC PD
50 50 W
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 -55 to 175 oC
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
RθJA
Maximum Junction-to-Case
RθJC
Maximum
50
3.0
Units
oC/W
oC/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1 Publication Order Number:
DS-AMD540CE_F
1 page  
Analog Power
AMD540CE
Typical Electrical Characteristics (P-Channel)
60
6V through 10V
50
40
30
4.5V
4V
3.5V
20 3V
10
0
0 0.5
1 1.5
2 2.5 3 3.5 4
VDS(V)
Output Characteristics
0.1
4.5V
0.09
0.08
0.07 6V
0.06
0.05 10V
0.04
0.03
0.02
0.01
0
0
10 20 30 40 50 60
ID Drain Current (A)
On Resistance Vs Vgs Voltage
10
VD= 10V
ID= 10A
8
6
4
2
0
0 5 10 15 20 25 30
QG, Total Gate Charge (nC)
Gate Charge
60
50
40
25C
30
20
10
0
01 234 5
VGS Gate to Source Voltage (V)
6
Transfer Characteristics
2400
2200 Ciss
2000
1800
1600
1400
1200
1000 Coss
800
600
400 Crs
200
0
0 5 10 15
VDS (V)
20
Capacitance
1.6
1.5 VGS = - 10V
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
-50
-25
0 25 50 75 100
TJ - Junction Temperature (oC)
On-Resistance vs. Junction Temperature
125
150
PRELIMINARY
5 Publication Order Number:
DS-AMD540CE_F
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AMD540CE.PDF ] | |
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