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PDF AMD532C Data sheet ( Hoja de datos )
| Número de pieza | AMD532C | |
| Descripción | N & P-Channel MOSFET | |
| Fabricantes | Analog Power | |
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Analog Power
AMD532C
P & N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
30 95 @ VGS = 2.5V
59 @ VGS = 4.5V
-26.5
178 @ VGS = -2.5V
118 @ VGS = -4.5V
ID (A)
20
24
-14
-17
• Low rDS(on) provides higher efficiency and
extends battery life
D S2
• Low thermal impedance copper leadframe
DPAK saves board space
• Fast switching speed
G1
G2
• High performance trench technology
S1
N-Channel MOSFET
S1 G1 D S2 G1
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter
Symbol N-Channel P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TA=25oC ID
IDM
30 -26.5
±12 ±12
24 -17
40 -40
Continuous Source Current (Diode Conduction)a
IS
30 -30
Power Dissipationa
TA=25oC PD
50 50
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 175
Units
V
A
A
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
RθJA
Maximum Junction-to-Case
RθJC
Maximum
50
3.0
Units
oC/W
oC/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1 Publication Order Number:
DS-AMD532_D
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet AMD532C.PDF ] | |
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